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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
*
DESCRIPTION *With TO-220C package *Complement to type 2SD1133/1134 APPLICATIONS *Low frequency power amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO PARAMETER Collector-base voltage 2SB857 VCEO Collector-emitter voltage 2SB858 VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -60 -5 -4 -8 40 150 -45~150 V A A W CONDITIONS Open emitter VALUE -70 -50 V UNIT V
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SB857 IC=-50mA; RBE=; 2SB858 IC=-10A; IE=0 IE=-10A; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-50V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS SYMBOL
2SB857 2SB858
MIN -50
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -60 -70 -5 -1.0 -1.0 -1 60 35 15 MHz 320 V V V V A
V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT
Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency
hFE-1 classifications B 60-120 C 100-200 D 160-320
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB857 2SB858
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
4

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